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RF-E 10

E-Field Probe 30 MHz up to 3 GHz

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  • RF-E 10, E-Field Probe 30 MHz up to 3 GHz
  • Probe head
    Probe head
RF-E 10, E-Field Probe 30 MHz up to 3 GHz Probe head
  • RF-E 10, E-Field Probe 30 MHz up to 3 GHz
  • Probe head
Short description

The electrode on the lower edge of the RF-E 10 probe head has a width of approx. 0.2 mm, which can locate even the smallest E-field sources, e.g. conducting paths with a width of 0.1 mm or, single IC pins at high pin ICs.

The RF-E 10 is a passive near-field probe. It has a higher resolution than the RF-E 02 and RF-E 05 probes. Because the probe head should be positioned directly onto the measuring object (high electrical field strength), it is not suitable for measurements within high-scale ranges. This can be done using RF-E 05 and RF-E 02. The E-field probe is small and handy. It has a current attenuating steath and its upper side is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The E-field probe does not have an internal terminating resistance of 50 Ω.

Technical parameters
Frequency response [dBµV] / [dBµV/mm] E- field correction curve [dBµV/mm] / [dBµV] Measuring principles
Frequency range 30 MHz ... 3 GHz
Resolution ≈ 0.2 mm
Probe head dimensions: ≈ (0.5 x 2) mm
Connector - output SMB, male, jack
Weight 15 g
Frequency response [dBµV] / [dBµV/mm] Frequency response [dBµV] / [dBµV/mm]
E- field correction curve [dBµV/mm] / [dBµV] E- field correction curve [dBµV/mm] / [dBµV]
Measuring principles Measuring principles