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XF-E 09s

E-Field Probe 30 MHz up to 6 GHz

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  • XF-E 09s, E-Field Probe 30 MHz up to 6 GHz
  • Probe head
    Probe head
XF-E 09s, E-Field Probe 30 MHz up to 6 GHz Probe head
  • XF-E 09s, E-Field Probe 30 MHz up to 6 GHz
  • Probe head
Short description

The electrode on the probe head of the XF-E 09s near-field probe detects electrical fields which, for example are decoupled above the IC’s surface. The probe’s resolution allows for measurements at a distance of 0.5 mm upto 10 mm above an assembly.

The XF-E 09s is a passive near-field probe. In principle it has the same structure as the XF-E 04s probe. To measure, the E-field probe is positioned above or onto components and printed circuit boards. It has a current attenuating sheath and, therefore, its upper half is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The E-field probe has an internal terminating resistance.

Technical parameters
Frequency response [dBµV] / [dBµV/mm] E- field correction curve [dBµV/mm] / [dBµV] Measuring principles
Frequency range 30 MHz ... 6 GHz
Probe head dimensions: ≈ (10 x 10) mm
Connector - output SMA, female, jack
Frequency response [dBµV] / [dBµV/mm] Frequency response [dBµV] / [dBµV/mm]
E- field correction curve [dBµV/mm] / [dBµV] E- field correction curve [dBµV/mm] / [dBµV]
Measuring principles Measuring principles