XFS-E 10
Scanner Probe 30 MHz up to 6 GHz
![XFS-E 10, Scanner Probe 30 MHz up to 6 GHz](/fileadmin/Bilder300/Disturbance emission_near field probe_XF-E 10_function_en_wPZ.png?v=1721113204126)
![](/fileadmin/Bilder300/2017.08.16 XFS-E 10 Scanner-Sonde.jpg?v=1721113206638)
Short description
The electrode in the probe head of the XFS-E 10 scanner probe has a width of approx. 0.2 mm. With the probe even smallest E-field sources can be located, e.g. conducting paths with a width of 0.1 mm or single pins on multi pinned ICs. To measure, the E-field probe is positioned onto the object.
The XFS-E 10 probe is a passive near-field probe. Normally the probe head is positioned directly onto the measured object (high electric field strength). It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field scanner probe has an internal terminating resistance.