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XF-R 3-1

H-Field Probe 30 MHz up to 6 GHz

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  • XF-R 3-1, H-Field Probe 30 MHz up to 6 GHz
  • Probe head
    Probe head
XF-R 3-1, H-Field Probe 30 MHz up to 6 GHz Probe head
  • XF-R 3-1, H-Field Probe 30 MHz up to 6 GHz
  • Probe head
Short description

The XF-R 3-1 near-field probe is designed for direct high-resolution measurements of RF magnetic fields on an assembly, e.g. around the pins and IC cases, conducting paths, decoupling capacitor, and EMC components.

In principle the XF-R 3-1 H-field probe has the same structure as the XF-R 100-1 and XF-R 400-1 probes. The resolution of the XF-R 3-1 is significantly higher. The H-field probe is suitable for measurements close to the components with high magnetic field strength. It is not suitable for measurements from large distances, which can be done using XF-R 400-1 and XF-R 100-1. The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe has an internal terminating resistance.

Technical parameters
Frequency response [dBµV] / [dBµA/m] H-field correction curve [dBµA/m] / [dBµV] Current correction curve [dBµA] / [dBµV] Measuring principles
Frequency range 30 MHz ... 6 GHz
Resolution ≈ 1 mm
Probe head dimensions: Ø ≈ 3 mm
Connector - output SMA, female, jack
Weight 15 g
Frequency response [dBµV] / [dBµA/m] Frequency response [dBµV] / [dBµA/m]
H-field correction curve [dBµA/m] / [dBµV] H-field correction curve [dBµA/m] / [dBµV]
Current correction curve [dBµA] / [dBµV] Current correction curve [dBµA] / [dBµV]
Measuring principles Measuring principles