RF-R 3-2
H-Field Probe 30 MHz up to 3 GHz
 
        				
        					
        						 
        					
        
        					Short description
The RF-R 3-2 near-field probe is used for the high-resolution measurement of RF magnetic fields directly on an assembly e.g. in range around pins and IC cases, conducting paths, decoupling capacitor and EMC components.
The RF-R 3-2 is a passive near-field probe.
It has the same basic construction as the RF-R 50-1 and RF-R 500-1 probes. However, the resolution of RF-R 3-2 is much higher. The H-field probe is designed to be used very close to the components and where high magnetic field strength occurs. It is not suitable for measurements from great distances, which can be done using the RF-R 400-1 and RF-R 50-1 probes. The near-field probe is small and handy. It has a current attenuating sheath and its upper side is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.
 
           
          ![Frequency response [dBµV] / [dBµA/m]](/fileadmin/Bilder300/Disturbance emission_near field probe_RF-R 3-2_frequency response_en_wPZ.png?v=1761771196910) 
        									![H-field correction curve [dBµA/m] / [dBµV]](/fileadmin/Bilder300/Disturbance emission_near field probe_RF-R 3-2_H-field correction curve_en_wPZ.png?v=1761771196910) 
        									![Current correction curve [dBµA] / [dBµV]](/fileadmin/Bilder300/Disturbance emission_near field probe_RF-R 3-2_current correction curve_en_wPZ.png?v=1761771196910)