XF-R 3-1
磁场探头(30MHz-6GHz)
 
        				
        					
        						 
        					
        
        					Short description
XF-R 3-1型近场探头: 用于高分辨率直接检测组件上,譬如IC的引脚或外壳、布线、旁路电容器和电磁兼容性(EMC)元件等区域的射频磁场。
In principle the XF-R 3-1 H-field probe has the same structure as the XF-R 100-1 and XF-R 400-1 probes. The resolution of the XF-R 3-1 is significantly higher. The H-field probe is suitable for measurements close to the components with high magnetic field strength. It is not suitable for measurements from large distances, which can be done using XF-R 400-1 and XF-R 100-1. The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe has an internal terminating resistance.
 
           
          ![频率特性 [dBµV] / [dBµA/m]](/fileadmin/Bilder300/Disturbance emission_near field probe_XF-R 3-1_frequency response_en_wPZ.png?v=1761782425851) 
        									![磁场校正曲线 [dBµA/m] / [dBµV]](/fileadmin/Bilder300/Disturbance emission_near field probe_XF-R 3-1_H-field correction curve_en_wPZ.png?v=1761782425851) 
        									![电流校正曲线 [dBµA] / [dBµV]](/fileadmin/Bilder300/Disturbance emission_near field probe_XF-R 3-1_current correction curve_en_wPZ.png?v=1761782425851)