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XF-E 04s

电场探头（30MHz-6GHz）

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  • XF-E 04s, 电场探头（30MHz-6GHz）
  • Probe head
    Probe head
XF-E 04s, 电场探头（30MHz-6GHz） Probe head
  • XF-E 04s, 电场探头（30MHz-6GHz）
  • Probe head
Short description

这种近场探头可以检测受测对象（IC）耦合产生的电场。探头的侧面采用屏障设计，所以侧面作用的电场不影响测量结果。这种近场探头的灵敏度允许在0.5到10mm的距离检测集成电路及其他电子模块的电场。

The XF-E 04s is a passive near-field probe. In principle it has the same structure as the XF-E 09s probes. To measure, the E-field probe is positioned above or onto components and printed circuit boards. It has a current attenuating sheath and, therefore, its upper half is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The E-field probe has an internal terminating resistance.

Technical parameters
频率特性 [dBµV] / [dBµV/mm] 电场校正曲线 [dBµV/mm] / [dBµV]
频率范围 30 MHz ... 6 GHz
探头尺寸 ≈ (5 x 5) mm
输出接口 SMA, female, jack
频率特性 [dBµV] / [dBµV/mm] 频率特性 [dBµV] / [dBµV/mm]
电场校正曲线 [dBµV/mm] / [dBµV] 电场校正曲线 [dBµV/mm] / [dBµV]